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02N06, LV, 低压, sgt

  • Fast switching
  • Low On-Resistance
  • Low gate Charge
  • Low reverse transfer capacitances
  • High avalanche ruggedness
  • RoHS product

BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications.

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