BL23N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.

• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS product

• BL23N50 Rev10.pdf

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