BLP021N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications.

• Fast Switching
• Low On-Resistance
• Low Gate Charge
• Low Reverse transfer capacitances
• High avalanche ruggedness
• RoHS product

• BLP021N10-T_V1.1_en.pdf

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